Based on the advanced and stable GaAs(gallium arsenide) and GaN(gallium nitride) process lines at home and abroad, Zhixing Micro is capable of designing, developing and batting microwave and millimeter-wave integrated chip circuits within the DC-110G frequency range, including low-noise amplifiers, ultra-wideband power amplifiers, high-linearity power amplifiers, high-power GaN chips, high-power internal matching tube amplifiers (IMFETs), multi-functional chips, switches, attenuators, phase shifters, frequency multipliers, mixers, VCOs, etc Mass production capacity.